Radiation hardness of silicon detectors manufactured on wafers from various sources
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چکیده
منابع مشابه
Aspects of radiation hardness for silicon microstrip detectors
The ways in which radiation damage affects the properties of silicon microstrip detectors are reviewed and discussed in the context of inner tracking or vertexing requirements for the LHC experiments.
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Figure 1. TXRF spectrum of a clean Si wafer surface showing 6.4x10 atoms/cm Fe and 2.6x10 atoms/cm Cu. The Cl is a residue from the HCl solution used to clean the wafer surface and the Ag is a artifact from the particular collimator used in these studies. Other features seen in the spectrum are the Si substrate peak, the scatter peak at 11.2 keV and the escape peak at 9.4 keV. Looking at Trace ...
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ژورنال
عنوان ژورنال: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
سال: 1997
ISSN: 0168-9002
DOI: 10.1016/s0168-9002(97)00005-3